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PIIPM15P12D007
I27179 22 - Sep
Electrical Characteristics: Inverter and Brake
For proper operation the device should be used within the recommended conditions.
T J = 25°C (unless otherwise specified)
Symbol
Parameter Definition
Min.
Typ.
Max.
Units
Test Conditions
Fig.
V (BR)CES
? V (BR)CES / ? T
Collector To Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
1200
+1.2
2.70
3.00
V
V/oC
V GE = 0V, I C = 250 μ A
V GE = 0V, I C = 1mA (25 - 125 oC)
I C = 15A, V GE = 15V
5, 6
V CE(on)
Collector To Emitter Saturation Voltage
3.74
4.24
V
I C = 30A, V GE = 15V
7, 9
3.14
3.61
I C = 15A, V GE = 15V, T J = 125 oC
10, 11
V GE(th)
? V GE(th) / ? Tj
g fe
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Trasconductance
4.68
8
4.89
-9.80
9
5.30
10
V
mV/oC
S
V CE = V GE , I C = 250 μ A
V CE = V GE , I C = 1mA (25 - 125 oC)
V CE = 50V, I C = 15A, PW = 80 μ s
12
125
V GE = 0V, V CE = 1200V
I CES
Zero Gate Voltage Collector Current
376
1110
μ A
V GE = 0V, V CE = 1200V, T J = 125 oC
2000
V GE = 0V, V CE = 1200V, T J = 150 oC
V FM
I GES
R1/2/3
Diode Forward Voltage Drop
Gate To Emitter Leakage Current
Sensing Resistors
9.9
2.32
2.47
10
2.52
2.64
±100
10.1
V
nA
m ?
I C = 15A
I C = 15A, T J = 125 oC
V GE =± 20V
8
Electrical Characteristics: Bridge
For proper operation the device should be used within the recommended conditions.
T J = 25°C (unless otherwise specified)
Symbol
V FM
Parameter Definition
Forward Voltage Drop
Min.
Typ.
1.24
1.08
Max.
1.76
1.27
Units
V
Test Conditions
t p = 400 μ s, I pk = 30A
t p = 400 μ s, I pk = 15A
Fig.
24
V F(TO)
Threshold voltage
0.78
V
T J = 125 oC
I rm
Reverse Leakage Current
5
mA
T J = 125 oC
V R = 1200V
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7
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